MOSFET

November 1995

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

___________________________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter 2N7000 2N7002 NDS7002A Units

VDSS Drain-Source Voltage 60 V

VDGR Drain-Gate Voltage (RGS < 1 MW) 60 V

VGSS Gate-Source Voltage - Continuous ±20 V

- Non Repetitive (tp < 50μs) ±40

ID Maximum Drain Current - Continuous 200 115 280 mA

- Pulsed 500 800 1500

PD Maximum Power Dissipation 400 200 300 mW

Derated above 25oC 3.2 1.6 2.4 mW/°C

TJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C

TL Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300 °C

THERMAL CHARACTERISTICS

RqJA

Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W

2N7000.SAM Rev. A1

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,

DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable,

and fast switching performance. They can be used in most

applications requiring up to 400mA DC and can deliver

pulsed currents up to 2A. These products are particularly

suited for low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and other

switching applications.

High density cell design for low RDS(ON).

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

S

D

G

S

G

D

TO-92

© 1997 Fairchild Semiconductor Corporation

2N7000

(TO-236AB)

2N7002/NDS7002A

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Conditions Type Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA All 60 V

IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 1 μA

TJ=125°C 1 mA

VDS = 60 V, VGS = 0 V 2N7002

NDS7002A

1 μA

TJ=125°C 0.5 mA

IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA

VGS = 20 V, VDS = 0 V 2N7002

NDS7002A

100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V 2N7000 -10 nA

VGS = -20 V, VDS = 0 V 2N7002

NDS7002A

-100 nA

ON CHARACTERISTICS (Note 1)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V

VDS = VGS, ID = 250 μA 2N7002

NDS7002A

1 2.1 2.5

RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 2N7000 1.2 5 W

TJ =125°C 1.9 9

VGS = 4.5 V, ID = 75 mA 1.8 5.3

VGS = 10 V, ID = 500 mA 2N7002 1.2 7.5

TJ =100°C 1.7 13.5

VGS = 5.0 V, ID = 50 mA 1.7 7.5

TJ =100C 2.4 13.5

VGS = 10 V, ID = 500 mA NDS7002A 1.2 2

TJ =125°C 2 3.5

VGS = 5.0 V, ID = 50 mA 1.7 3

TJ =125°C 2.8 5

VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 0.6 2.5 V

VGS = 4.5 V, ID = 75 mA 0.14 0.4

VGS = 10 V, ID = 500mA 2N7002 0.6 3.75

VGS = 5.0 V, ID = 50 mA 0.09 1.5

VGS = 10 V, ID = 500mA NDS7002A 0.6 1

VGS = 5.0 V, ID = 50 mA 0.09 0.15

2N7000.SAM Rev. A1

Electrical Characteristics TA = 25oC unless otherwise noted

Symbol Parameter Conditions Type Min Typ Max Units

ON CHARACTERISTICS Continued (Note 1)

ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V 2N7000 75 600 mA

VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700

VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700

gFS Forward Transconductance VDS = 10 V, ID = 200 mA 2N7000 100 320 mS

VDS

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